价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDP86363-F085 | 66 | 16h | |||||||||
| DigiKey | FDP86363-F085-ND | 183 | 1 | Tube | ||||||||
| Farnell | FDP86363-F085 | 0 | 400 | Tube | 2h | |||||||
| Mouser | 512-FDP86363_F085 | 715 | 1 | Tube | ||||||||
| Microchip USA | FDP86363-F085 | 382 | 150 | Tray | 8h |
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-07-03
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
InfineonIPP120N06S4H1AKSA2
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
NXP SemiconductorsBUK753R5-60E,127
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FDP86363-F085 的描述。
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(3+Tab) TO-220 Rail
N-Channel PowerTrench® 80V, 110A, 2.8mΩ
300W(Tc) 20V 4V@ 250¦ÌA 150nC@ 10 V 1N 80V 2.8m¦¸@ 80A,10V 110A 10nF@40V TO-220-3 10.67mm*4.7mm*16.3mm
Power Field-Effect Transistor, 110A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET NMOS TO220 80V 2.8 MOHM
110A, 80V, 0.0028OHM, N-CHANNEL
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max2.8 mΩ
Rise Time129 ns
Turn-Off Delay Time64 ns
Turn-On Delay Time38 ns