供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-06-05
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
相关零件
STMicroelectronicsSTP60NF06L
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET(TM) II Power MOSFET in TO-220 package
描述
由其分销商提供的 onsemi FDP65N06 的描述。
N-Channel Power MOSFET, UniFETTM, 60 V, 65 A, 16 mΩ, TO-220
Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:135W; Rohs Compliant: Yes |Onsemi FDP65N06,
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)65 A
Current Rating65 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.17 nF
Max Operating Temperature150 °C
Max Power Dissipation135 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
Power Dissipation135 W
Rds On Max16 mΩ
Rise Time94 ns
Turn-Off Delay Time98 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)60 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm