供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
VishayIRFZ48RPBF
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 60V 50A TO-220AB
InfineonIRFZ44EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-220AB;PD 110W;VGS +/-20V
描述
由其分销商提供的 onsemi FDP5680 的描述。
MOSFET N-CH 60V 40A TO-220
Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
MOSFETs 60V N-Ch PowerTrench
MISCELLANEOUS MOSFETS;
60V, TO220, NCH
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.85 nF
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation65 W
Rds On Max20 mΩ
Rise Time9 ns
Turn-Off Delay Time35 ns