onsemi FDP16N50
$ 1.418
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
相关零件
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Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
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N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
描述
由其分销商提供的 onsemi FDP16N50 的描述。
200W(Tc) 5V@ 250¦ÌA 45nC@ 10V 1N 500V 380m¦¸@ 8A,10V 1.945pF@25V TO-220-3
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:16A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:64A; Pin Configuration:G(1),D(2)S(3); Power, Pd:200W; Resistance, Rds on Max:0.38ohm; Resistance, Rds on Typ.:0.31ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.63°C/W; Typ Capacitance Ciss:1495pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.945 nF
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Rds On Max380 mΩ
Rise Time150 ns
Turn-Off Delay Time65 ns
Voltage Rating (DC)500 V