供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1998-11-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRLML2402GTRPBF
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOT-23, HALOGEN-FREE
InfineonIRLML2402TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V
描述
由其分销商提供的 onsemi FDN336P 的描述。
P-Channel PowerTrench® MOSFET, Logic Level, -20V, -1.3A, 200mΩ
Power MOSFET, P Channel, 20 V, 1.3 A, 0.2 ohm, SuperSOT, Surface Mount
SINGLE P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
500mW(Ta) 8V 1.5V@ 250µA 5nC@ 4.5 V 1individualPChannel 20V 200mΩ@ 1.3A,4.5V 1.3A 330pF@10V SOT-23-3 SMD mount 2.92mm*1.4mm*950μm
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.3 A
Current Rating-1.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time12 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-900 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length2.92 mm
Width1.4 mm