供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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描述
由其分销商提供的 onsemi FDMT800100DC 的描述。
PT5 100V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, PQFN, NON-JEDEC, MV, 8.0X8.0 MM
N-Channel PowerTrench® MOSFET, Dual Cool™ 88, 100V, 162A, 2.95mΩ
Power Field-Effect Transistor, 162A I(D), 100V, 0.00295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
100V 162A 2.3m´Î@10V24A 156W 2.8V@250uA 35pF@50V N Channel 5.595nF@50V 50nC@0~6V -55¡Í~+150¡Í@(Tj) DualCool-88-8 MOSFETs ROHS
MOSFET, N-CH, 100V, 162A, DUAL COOL 88; Transistor Polarity: N Channel; Continuous Drain Current Id: 162A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Weight248.52072 mg
Technical
Continuous Drain Current (ID)162 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.95 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.835 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.2 W
Rds On Max2.95 mΩ
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time29 ns
Dimensions
Height1.02 mm