onsemi FDMS8690

Trans MOSFET N-CH Si 30V 14A 8-Pin MLP EP T/R

2.5W(Ta)，37.8W(Tc) 3V@ 250µA 27nC@ 10V 1individualNChannel 30V 9mΩ@ 14A,10V 1.68pF@15V SMD mount

Power Field-Effect Transistor, 27A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.