相关零件
InfineonBSC020N03LSGATMA1
Power MOSFET, N Channel, 30 V, 176 A, 2 MilliOhms, TDSON, 8 Pins, Surface Mount
描述
由其分销商提供的 onsemi FDMS8660AS 的描述。
2.5W(Ta),104W(Tc) 3V@1mA 83nC@ 10V 1N 30V 2.1m¦¸@ 28A,10V 5.865pF@15V 8PQFN
TRANS MOSFET N-CH 30V 28A 8-PIN POWER 56
Power Field-Effect Transistor, 28A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30V N-Channel PowerTrench® SyncFET™
Trans MOSFET N-CH Si 30V 28A T/R
The FDMS8660AS has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.865 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.1 mΩ
Resistance2.1 MΩ
Rise Time8 ns
Turn-Off Delay Time42 ns