供应链
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
描述
由其分销商提供的 onsemi FDMS86180 的描述。
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 151A, 3.2mΩ
N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56
Transistor MOSFET N-CH 100V 151A 8-Pin Power 56 T/R
Avnet Japan
Power Field-Effect Transistor, 151A I(D), 100V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
N-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)151 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation138 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation138 W
Schedule B8541290080
Threshold Voltage3.2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time24 ns
Dimensions
Height1.1 mm