供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
相关零件
InfineonIRF7805ZTRPBF
MOSFET, Power;P-Ch;VDSS 30V;RDS(ON) 5.5Milliohms;ID 16A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 onsemi FDMS6673BZ 的描述。
P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ
FDMS6673BZ Series -30 V -82 A 6.8 mOhm P-Channel PowerTrench Mosfet - Power56
Small Signal Field-Effect Transistor, 15.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, P CH, 30V, 28A, POWER56; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:73W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)15.2 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vds)-30 V
Element ConfigurationSingle
Fall Time79 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.915 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max6.8 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time97 ns
Turn-On Delay Time14 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明