供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-06
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)
相关零件
InfineonIRFR4620TRLPBF
N CH POWER MOSFET, NEXFET, 200V, 24A, DPAK; Transistor Polarity:N Channel; Conti
描述
由其分销商提供的 onsemi FDMS2672 的描述。
N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
onsemi N-Ch UltraFET MOSFET, Vds=200V, Id=20A, PQFN8, SMD, 8-Pin
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight210 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance156 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.315 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max77 mΩ
Resistance77 MΩ
Rise Time11 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)200 V
Dimensions
Height800 µm
Length5 mm
Width6 mm