供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDMS2572 的描述。
N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ
150V, 4.5A,47 OHM, NCH ULTRAFET TRENCH MOSFET
Trans MOSFET N-CH Si 150V 4.5A 8-Pin Power 56 T/R
onsemi NMOS UltraFET, Vds=150 V, 24 A, PQFN8, , 8
Power Field-Effect Transistor, 27A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 150V 47.0 Mohm Mlp Rohs Compliant: Yes
MOSFET SI7430DP N 150V 25A~NH4213227
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFET N-CH 150V 4.5A/27A 8MLP
IC MCU 32BIT 1MB FLASH 100TQFP
UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
MOSFET, N CH, 150V, 27A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight210 mg
Technical
Continuous Drain Current (ID)27 A
Current Rating4.5 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance53 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.61 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max47 mΩ
Resistance47 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time38 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)150 V
Dimensions
Height800 µm
Length5 mm
Width6 mm