供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-04-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDMS007N08LC 的描述。
Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package.
onsemi NChannel EnhancedMOSTube, Vds=80 V, 84 A, PQFNencapsulation, surface mount, 8Pin
Transistor MOSFET N-CH 80V 84A 8-Pin PQFN T/R
Avnet Japan
Power Field-Effect Transistor, 84A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N-CH, 80V, 84A, 150DEG C, 92.6W; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0049ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Terminals5
Technical
Continuous Drain Current (ID)84 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance6.7 mΩ
Drain to Source Voltage (Vds)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation92.6 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm