onsemi FDMQ8205

FDMQ8205 Series 80 V 35/95 mOhm Dual N/P-Channel Mosfet for Bridge App. - MLP-16

GreenBridgeTM 2 Series of High-Efficiency Bridge Rectifiers

Trans MOSFET N/P-CH 12-Pin WDFN EP T/R

Small Signal Field-Effect Transistor, 1.7A I(D), 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IC OR CTRLR BRIDGE RECT 12MLP / OR Controller Bridge Rectifier N and P-Channel Bridge (2) 12-MLP (5x4.5)

MOSFET, DUAL N & P-CH, 57V, 150DEG C;

场效应管, MOSFET, 双 N 与 P沟道, 57V, 150度 C;

High Efficiency Bridge Rectifier

FDMQ8205 - GREENBRIDGETM 2 SERIE

GREENBRIDGETM2 SER HE BRDG RECT

FDMQ8205 is GreenBridgeTM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is clasified by IEEE802.3at. FDMQ8205 is configured with low rDS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205 enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications.FDMQ8205 GreenBridgeTM2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage.