由其分销商提供的 onsemi FDME905PT 的描述。
TRANSISTOR, P-CHANNEL, POWERTRENCH MOSFET, -12V, -8A, 22 MOHM, LOW PROFILE
P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ
P-Ch. Er Trench Mosfet Rohs Compliant: Yes |Onsemi FDME905PT
Trans MOSFET P-CH 12V 8A 6-Pin MicroFET T/R
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
onsemi PMOS PowerTrench, Vds=12 V, 8 A, MicroFET 2 x 2, , 6
MOSFET, P-CHANNEL, 12V, 8A, UFET;
POWER FIELD-EFFECT TRANSISTOR, 8
MOSFET, P CH, 12V, 8A, MFET1.6X1.6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.