供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
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MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
描述
由其分销商提供的 onsemi FDMD8530 的描述。
Transistor MOSFET Array Dual N-CH 30V 201A 8-Pin PQFN T/R
Avnet Japan
Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ
MOSFET 2N-CH 30V 35A / Mosfet Array 30V 35A 2.2W Surface Mount Power56
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 201A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 770µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg
This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight94.85095 mg
Technical
Continuous Drain Current (ID)201 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.395 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.2 W
Rds On Max1.25 mΩ
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time71 ns
Turn-On Delay Time14 ns
Dimensions
Height800 µm