供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-21
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FDMC8651 的描述。
N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ
Trans MOSFET N-CH Si 30V 15A 8-Pin Power 33 T/R / MOSFET N-CH 30V 15A POWER33
2.3W(Ta), 41W(Tc), 12V, 1.5V@250µA, 27.2nC@4.5V, 2 N-Ch, 30V, 990μΩ@36A,10V, 36A, 100A, 14.965nF@15V, SMD, 3.3mm × 3.3mm × 1.05mm
MOSFET, N CH, 30V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.1 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.365 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max6.1 mΩ
Resistance6.1 MΩ
Rise Time9 ns
Threshold Voltage800 mV
Turn-Off Delay Time35 ns
Turn-On Delay Time18 ns
Dimensions
Height1.05 mm
Length3.3 mm
Width3.3 mm