供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-12-02
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
相关零件
STMicroelectronicsSTD16NF06LT4
N-channel 60 V, 0.060 Ohm typ., 16 A STripFET II Power MOSFET in DPAK package
STMicroelectronicsSTD16NF06T4
STMicroelectronics N-Ch Enhancement MOSFET STripFET Series Vds=60V 16A DPAK (TO-252) SMD 3-Pin
描述
由其分销商提供的 onsemi FDMC86320 的描述。
N-Channel Power Trench® MOSFET 80V, 22A, 11.7mΩ
80 V, 22 A, 11.7 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)10.7 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance11.7 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.64 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max11.7 mΩ
Rise Time8 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Dimensions
Height750 µm
Length3.3 mm
Width3.3 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明