供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-11-27
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
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描述
由其分销商提供的 onsemi FDMC86261P 的描述。
P-Channel PowerTrench® MOSFET -150V, -9A, 160mΩ
FDMC86261P Series -150 V -9 A 160 mOhm P-Channel PowerTrench Mosfet - MLP-8
onsemi P-Ch Enhancement MOSFET PowerTrench Vds=150V 2.7A Power33 SMD 8-Pin
MOSFET, P-CH, -9A, -150V, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Pow
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vds)-150 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max160 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time11 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm