onsemi FDMC86260

Name: onsemi FDMC86260
Brand: onsemi
SKU: FDMC86260

Power MOSFET, Shielded Gate, N Channel, 150 V, 25 A, 0.027 ohm, PQFN, Surface Mount

$ 1.23

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Distributor		SKU		Min	Pkg
Newark	2	FDMC86260	2,860	1	Cut Tape	2.060	1.460	1.090	0.952	0.952
Verical		FDMC86260	246	203					1.538	1.375
Rochester Electronics		FDMC86260	247					1.480	1.230	1.100	15h
DigiKey	3	FDMC86260CT-ND	1,497	1	Cut Tape	3.640	2.373	1.652	1.330	1.330
Onlinecomponents.com		FDMC86260	0	25	Bulk			1.065	0.929	0.922

数据表和文档

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Master Electronics

Datasheet0 页0 年前

onsemi

IHS

Upverter

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-12.96%

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-12-27

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMC86260 的描述。

Power MOSFET, Shielded Gate, N Channel, 150 V, 25 A, 0.027 ohm, PQFN, Surface Mount

Avnet Silica

N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ

onsemi

N-Channel 150 V 16 A 34 MO Surface Mount PowerTrench Mosfet - Power 33

Future Electronics

Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Semicontronic

MOSFET, N-CH, 25A, 150V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Powe

Farnell

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor