供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-02
Lifecycle StatusNRND (Last Updated: 4 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 4 days ago)
相关零件
InfineonBSC020N03LSGATMA1
Power MOSFET, N Channel, 30 V, 176 A, 2 MilliOhms, TDSON, 8 Pins, Surface Mount
描述
由其分销商提供的 onsemi FDMC7660DC 的描述。
N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 2.2mΩ
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
3W(Ta)，78W(Tc) 20V 2.5V@ 250µA 76nC@ 10 V 1individualNChannel 30V 2.2mΩ@ 22A,10V 30A，40A 5.17nF@15V SMD mount 3.3mm*3.3mm*1mm
N CH MOSFET, DUAL COOL POWERTRENCH SYNCFET, 30V, 30A, POWER 33; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.17 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max2.2 mΩ
Resistance2.2 MΩ
Rise Time6.6 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm
Length3.3 mm
Width3.3 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明