供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-30
Lifecycle StatusProduction (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 6 days ago)
相关零件
InfineonIRFH4210DTRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
描述
由其分销商提供的 onsemi FDMC7570S 的描述。
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
MOSFET N-Channel 20V 3V@1mA Qg 68nC@10V Vgs 25V Rds(on) 2mΩ@27A,10V Id 27A,40A Ciss 4.41nF@13V PQFN-8 SMD 3.3mm × 3.3mm × 800μm
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.41 nF
Max Operating Temperature150 °C
Max Power Dissipation59 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
Power Dissipation59 W
Rds On Max2 mΩ
Resistance2 MΩ
Rise Time6.8 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time34 ns
Turn-On Delay Time14 ns
Dimensions
Height1.05 mm
Length3.3 mm
Width3.3 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明