供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-04-18
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
相关零件
VishaySI7232DN-T1-GE3
SI7232DN-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,24 A,20V,8-PIN POWERPAK 1212
描述
由其分销商提供的 onsemi FDMA910PZ 的描述。
P-Channel PowerTrench® MOSFET -20V, -9.4A, 20mΩ
Single P-Channel 20 V 34 mOhm 29 nC 2.4 W PowerTrench SMT Mosfet - MICROFET-2x2
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P-CH, 20V, 6MLP; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9.4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vds)-20 V
Element ConfigurationSingle
Fall Time103 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance2.805 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation900 mW
Rds On Max20 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-500 mV
Turn-Off Delay Time135 ns
Turn-On Delay Time9.4 ns
Dimensions
Height850 µm
Length2 mm
Width2 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明