供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-09
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
相关零件
InfineonIRFTS8342TRPBF
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Diodes Inc.DMC3028LSD-13
Dual N/P-Channel 30 V 0.045/0.041 Ohm 5.2/16.4 nC 2.1 W Silicon Mosfet - SOIC-8
onsemiNTMS4800NR2G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 4.9A Ta 6.4A 2W 6.5ns
InfineonBSO220N03MSGXUMA1
MOSFET N-CH 30V 7A 8DSO N-Channel 30 V 7A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
描述
由其分销商提供的 onsemi FDMA8884 的描述。
N-Channel PowerTrench® MOSFET 30V, 6.5A, 23mΩ
Trans MOSFET N-CH 30V 6.5A 6-Pin MicroFET EP T/R
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 6.5/8A 6MICROFET
Pt8 30/20V Nch Mlp 2/Reel |Onsemi FDMA8884
1.9W(Ta) 20V 3V@ 250µA 7.5nC@ 10 V 1individualNChannel 30V 23mΩ@ 6.5A,10V 6.5A，8A 450pF@15V MICROFET-6 SMD mount 2mm*2mm*750μm
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance450 pF
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.9 W
Rds On Max23 mΩ
Rise Time1 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time5 ns
Dimensions
Height750 µm
Length2 mm
Width2 mm