供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2013-09-11
LTD Date2014-03-11
相关零件
VishaySI5935CDC-T1-GE3
SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
描述
由其分销商提供的 onsemi FDFMA2P859T 的描述。
-20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Trans MOSFET P-CH 20V 3A 6-Pin MicroFET EP T/R
P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
Power Field-Effect Transistor, 3A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
1.4W(Ta) 1.3V@ 250µA 6nC@ 4.5V 1individualPChannel 20V 120mΩ@ 3A,4.5V 435pF@10V MICROFET SMD mount
Transistor Array; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV ;RoHS Compliant: Yes
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance120 mΩ
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance435 pF
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.4 W
Rds On Max120 mΩ
Rise Time11 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time9 ns