供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-07
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
相关零件
InfineonIRLMS1902TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
onsemiNTR4501NT3G
Single N-Channel Power MOSFET 20V, 3.2A, 80mΩ, SOT-23 (TO-236) 3 LEAD, 10000-REEL
描述
由其分销商提供的 onsemi FDFM2N111 的描述。
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ
Transistor,mosfet,n-Channel,20V V(Br)Dss,4A I(D),llcc
Trans MOSFET N-CH 20V 4A 6-Pin MLP EP T/R
Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE
Integrated Nch mosfet & schottky diode
6LD, MLP, JEDEC, MO-229, DUAL, 3MM SQUARE<AZ
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight165.33333 mg
Technical
Collector Emitter Breakdown Voltage2 V
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance273 pF
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.7 W
Rds On Max100 mΩ
Rise Time7 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)20 V
Dimensions
Height750 µm
Length3 mm
Width3 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明