供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-09
LTD Date2011-03-09
相关零件
VishaySUD19P06-60L-E3
2.7W(Ta),46W(Tc) 20V 3V@ 250¦ÌA 40nC@ 10 V 1P 60V 60m¦¸@ 10A,10V 19A 1.71nF@25V TO-252AA 2.39mm
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
描述
由其分销商提供的 onsemi FDD6776A 的描述。
Trans MOSFET N-CH 25V 17.7A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 17.7A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
PT6 NCH MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17.7 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.49 nF
Max Operating Temperature175 °C
Max Power Dissipation39 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.7 W
Rds On Max7.5 mΩ
Rise Time5 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time8 ns