供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
相关零件
InfineonIRLR8726TRLPBF
N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity:N Channel; Contin
onsemiNTD80N02T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 80A Tc 80A 75W 40ns
描述
由其分销商提供的 onsemi FDD6606 的描述。
N-Channel 30V 75A (Ta) 71W (Tc) Surface Mount D-PAK (TO-252AA)
MOSFET N-CH 30V 75A D-PAK
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
MOSFETs 30V N-Ch PowerTrench
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature175 °C
Max Power Dissipation71 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation71 W
Rds On Max6 mΩ
Rise Time12 ns
Turn-Off Delay Time38 ns
Voltage Rating (DC)30 V