供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiNTR4501NT3G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 3.2A Ta 3.2A 1.25W 12ns
描述
由其分销商提供的 onsemi FDC642P 的描述。
P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ
Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R / MOSFET P-CH 20V 4A 6SSOT
P-CHANNEL 2.5 V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)4 A
Current Rating-4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance925 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time120 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm