供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-07-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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20V 3.4A 1.25W 80mΩ@4.5V,4.5A 1.25V@250uA P Channel SOT-23-6 MOSFETs ROHS
描述
由其分销商提供的 onsemi FDC6401N 的描述。
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ
Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R
Avnet Japan
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time1.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time7 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time13 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm