供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
描述
由其分销商提供的 onsemi FDC6322C 的描述。
Small Signal Field-Effect Transistor
MOSFET N/P-CH 25V SSOT-6
SMALL SIGNAL P-CHANNEL MOSFET
MOSFET N/P-CH 25V 0.22A SSOT6
25V 1/2 BR N/P, 4/1.1 O, SSOT6
MOSFETs SSOT-6 COMP N-P-CH
MISCELLANEOUS MOSFETS;
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:0.22A; On Resistance, Rds(on):5ohm; Rds(on) Test Voltage, Vgs:2.7V; Drain-Source Breakdown Voltage:25V RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation700 mW
Rds On Max4 Ω
Rise Time8 ns
Turn-Off Delay Time55 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm