onsemi FDC6303N

Name: onsemi FDC6303N
Brand: onsemi
SKU: FDC6303N

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

$ 0.201

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Distributor		SKU		Min	Pkg
Newark	2	FDC6303N	315	1	Cut Tape	0.752	0.468	0.301	0.206	0.206
Verical		FDC6303N	6,000	250					0.235	0.173
Master Electronics		FDC6303N	6,000	250					0.200	0.146
Onlinecomponents.com		FDC6303N	6,000	250	Bulk				0.200	0.146
Rochester Electronics		FDC6303N	973					0.177	0.147	0.131	20h

数据表和文档

下载 onsemi FDC6303N 的数据表和制造商文档。

IHS

Datasheet5 页28 年前

Datasheet0 页0 年前

Upverter

onsemi

Farnell

element14 APAC

库存历史记录

3 个月趋势:

-5.05%

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDC6303N 的描述。

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

Avnet Japan

DIGITAL FET, DUAL N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Fairchild Semiconductor