数据表和文档
下载 onsemi FDB2614 的数据表和制造商文档。
官方数据表12 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-12-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIPB108N15N3GATMA1
Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount
描述
由其分销商提供的 onsemi FDB2614 的描述。
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time162 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.23 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation260 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation260 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time284 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time103 ns
Turn-On Delay Time77 ns
Voltage Rating (DC)200 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
数据表和文档
下载 onsemi FDB2614 的数据表和制造商文档。
官方数据表12 年前