供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-10-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
描述
由其分销商提供的 onsemi FDAF69N25 的描述。
Small Signal Transistors 150V, N-CH U NIFET MOSFET
Power Field-Effect Transistor, 34A I(D), 250V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 250V 34A (Tc) 115W (Tc) Through Hole TO-3PF
MOSFET, N, TO-3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:250V; On Resistance Rds(on):41mohm; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Package / Case:TO-3PF; Power Dissipation Pd:115W; Pulse Current Idm:136A; Termination Type:Through Hole; Transistor Type:Enhancement; Voltage Vds Typ:250V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time220 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.64 nF
Max Operating Temperature150 °C
Max Power Dissipation115 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation115 W
Rds On Max41 mΩ
Rise Time855 ns
Threshold Voltage5 V
Turn-Off Delay Time130 ns