供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-09-12
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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描述
由其分销商提供的 onsemi FCPF400N80ZL1 的描述。
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
FCPF400xx Series 800 V 11 A 400 mOhm N-Channel SuperFET® II Mosfet - TO-220F-3
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time2.6 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.35 nF
Max Operating Temperature150 °C
Max Power Dissipation35.7 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns