onsemi FCPF067N65S3

Name: onsemi FCPF067N65S3
Brand: onsemi
SKU: FCPF067N65S3

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220F

$ 3.674

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet	2	FCPF067N65S3	14,082	50				3.823	3.608	3.608	1d
Newark	2	FCPF067N65S3	14,082	50				4.840	4.710	4.710
DigiKey		FCPF067N65S3-ND	882	1	Tube	8.310	8.310	4.166	3.608	3.608
Flip Electronics		FCPF067N65S3	25,000								7d
Onlinecomponents.com		FCPF067N65S3	0	50	Bulk			4.100	3.510	3.480

数据表和文档

下载 onsemi FCPF067N65S3 的数据表和制造商文档。

官方数据表5 年前

库存历史记录

3 个月趋势:

-2.12%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FCPF067N65S3 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装		下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCPF067N65S3 的描述。

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220F

onsemi

TRANSISTOR, MOSFET, POWER, N-CHANNEL, EASY DRIVE, 650V, 44A, 67MOHM

RS (Formerly Allied Electronics)

MOSFET N-CH 650V 44A TO220F / Telecom / Sever Power Supplies

Win Source

Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Mosfet, N-Ch, 650V, 44A, To-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCPF067N65S3

Newark

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

Fairchild Semiconductor