供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-11-04
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
相关零件
描述
由其分销商提供的 onsemi FCP16N60 的描述。
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220
Power Field-Effect Transistor, 16A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.26ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance260 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.25 nF
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation167 W
Rds On Max260 mΩ
Rise Time130 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time165 ns
Turn-On Delay Time42 ns
Voltage Rating (DC)600 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm