供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-08-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FCP165N65S3 的描述。
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220
MOSFET N-CH 650V 19A TO220-3 / N-Channel 650 V 19A (Tc) 154W (Tc) Through Hole TO-220-3
Power Field-Effect Transistor, 19A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 19A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCP165N65S3
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Drain to Source Resistance165 mΩ
Max Operating Temperature150 °C
Max Power Dissipation154 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080