onsemi FCMT199N60

N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88

PQFN88 PKG, 199mohm, 600V, SuperFET2 - 4LD, PQFN, NON-JEDEC, HV, 8.0X8.0 MM

Power Field-Effect Transistor, 20.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

MOSFET, N-CH, 20.2A, 600V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 208W; Transistor Case Style: PQFN; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: SuperFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solarinverter applications.The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2).SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductanceand separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).