onsemi FCH47N60-F133

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 47 A, 70 mΩ, TO-247

600 V, 47 A, 70 MILLI OHM N-CHANNEL SUPERFET II MOSFET Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

MOSFET, N CH, 600V, 47A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:417W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:141A

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.