onsemi FCD360N65S3R0

Name: onsemi FCD360N65S3R0
Brand: onsemi
SKU: FCD360N65S3R0

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, DPAK

$ 1.187

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制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Avnet	2	FCD360N65S3R0	12,500	2500						1.021	2d
Newark		FCD360N65S3R0	1,995	1	Cut Tape	2.720	2.090	1.720	1.420	1.420
Arrow Electronics	2	FCD360N65S3R0	2,450	1		1.385	1.159	1.075	1.038	1.038
Verical	3	FCD360N65S3R0	2,450	2			1.159	1.075	1.038	0.937
Rochester Electronics		FCD360N65S3R0	615					1.320	1.100	0.977	21h

数据表和文档

下载 onsemi FCD360N65S3R0 的数据表和制造商文档。

Upverter

Technical Drawing1 页3 年前

IHS

Master Electronics

onsemi

Newark

库存历史记录

3 个月趋势:

-0.12%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-03-09

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCD360N65S3R0 的描述。

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, DPAK

onsemi

Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R

Richardson RFPD

Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

onsemi NMOS, Vds=650 V, 10 A, DPAK (TO-252), , 3

UnikeyIC

POWER MOSFET, N-CHANNEL, SUPERFE

DigiKey Marketplace

650V 10A 036Ohms N Channel TO-252 DPAK

Future Electronics

Mosfet, N-Ch, 650V, 10A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCD360N65S3R0

Newark