The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
OPTOCOUPLER, TRANSISTOR O/P; No. of Channels:1; Isolation Voltage:7.5kV; Optocoupler Output Type:Phototransistor; Input Current:60mA; Output Voltage:70V; Opto Case Style:DIP; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Approval Bodies:VDE, UL, CSA; Breakover Voltage Min:70V; Current Transfer Ratio Min:63%; Fall Time tf:2.3µs; Forward Current If(AV):10mA; Operating Temperature Range:-40°C to +100°C; Output Type:Phototransistor; Rise Time:1.6µs; Row Pitch:9mm