供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
描述
由其分销商提供的 onsemi BF245C 的描述。
UHF BAND Si N-CHANNEL RF SMALL SIGNAL JFET TO-92
Trans JFET N-CH 3-Pin TO-92 Bulk
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:25mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:12mA to 25mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:25mA; Current Idss Min:12mA; Current Ig:10mA; Device Marking:BF245C; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Operating Frequency Range:1MHz to 500MHz; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight200 mg
Technical
Breakdown Voltage30 V
Continuous Drain Current (ID)100 mA
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)3.2 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation350 mW
TerminationThrough Hole
Voltage Rating30 V
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm