onsemi BF245B

Name: onsemi BF245B
Brand: onsemi
SKU: BF245B

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Farnell	BF245B	0	5			0.417*	0.259*	0.120*	0.120*	6h
element14 APAC	BF245B	0	5			0.419*	0.261*	0.120*	0.120*	2h
Component Stockers USA	BF245B	753			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	WS-BF245B	1,925	40				1.339	1.087	1.087	9h
Worldway Electronics	BF245B	27,233	7	Bulk		0.036	0.035	0.033	0.033	1d

数据表和文档

下载 onsemi BF245B 的数据表和制造商文档。

IHS

Datasheet9 页4 年前

Datasheet3 页22 年前

Datasheet1 页0 年前

Datasheet4 页25 年前

Fairchild Semiconductor

onsemi

Farnell

CAD 模型

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供应链

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1976-07-06

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2009-03-31

LTD Date2009-09-30

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi BF245B 的描述。

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

IHS

UHF BAND Si N-CHANNEL RF SMALL SIGNAL JFET TO-92

Component Stockers USA

N-Channel Amplifiers / JFET N-CH 30V 15MA TO92

Win Source

Trans JFET N-CH 3-Pin TO-92 Bulk

Avnet

RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes

Newark

TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel

element14 APAC