供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2012-02-23
LTD Date2012-08-23
描述
由其分销商提供的 onsemi BF199 的描述。
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Bulk
RF TRANS NPN 25V 1.1GHZ TO92-3 / RF Transistor
TRANSISTOR RF NPN 25V 50MA TO-92
RF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:50mA; Mounting Type:Through Hole; Voltage Rating:25V ;RoHS Compliant: Yes
TRANSISTOR,NPN,0.05A,25V,TO92; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency Typ ft:1.1GHz; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:38; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:10mA; Gain Bandwidth ft Typ:1.1GHz; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight202 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency1.1 GHz
Gain Bandwidth Product1.1 GHz
hFE Min38
Max Collector Current50 mA
Max Frequency1.1 GHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation350 mW
Transition Frequency1.1 GHz
Voltage Rating (DC)25 V
Dimensions
Height4.78 mm