onsemi BDV65BG

10 A, 100 V NPN Darlington Bipolar Power Transistor

Trans, Bjt, Single, Darlington, Npn; Available Until Stocks Are Exhausted |Onsemi BDV65BG

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin

BDV Series 100 V 10 A Complementary Silicon Power Darlington Transistor - TO-247

DARLINGTON TRANSISTOR, TO-247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: 10A; DC Current Gain hFE: 1000hFE; Transistor Cas

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 100 / Power Dissipation (Pd) W = 125 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2 / Reflow Temperature Max. °C = 260