onsemi BDV65BG

Name: onsemi BDV65BG
Brand: onsemi
SKU: BDV65BG

10 A, 100 V NPN Darlington Bipolar Power Transistor

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min
Avnet		BDV65BG	0	981						8h
element14 APAC		BDV65BG	0	1	3.129*	2.141*	1.786*	1.565*	1.565*	20h
Farnell		BDV65BG	0	1	2.317*	2.317*	2.317*	2.317*	2.317*	1d
Win Source		WS-BDV65BG	4,600	55			1.067	0.711	0.711	7h
Worldway Electronics	2	BDV-65BG	27,845	7		0.899	0.872	0.826	0.826	6h

数据表和文档

下载 onsemi BDV65BG 的数据表和制造商文档。

Upverter

Datasheet7 页13 年前

Farnell

onsemi

库存历史记录

3 个月趋势:

-100%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-06-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi BDV65BG 的描述。

10 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin

IHS

BDV Series 100 V 10 A Complementary Silicon Power Darlington Transistor - TO-247

Future Electronics

Darlington Transistor, Npn, 100V, To-247; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:10A; Power Dissipation Pd:125W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes

Newark

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 100 / Power Dissipation (Pd) W = 125 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2 / Reflow Temperature Max. °C = 260

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