onsemi BD676G

Medium Power PNP Darlington Bipolar Power Transistor

BD Series 45 V 4 A Medium Power Silicon PNP Darlington Transistor - TO-225

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

ON SEMI BD676G PNP DARLINGTON TRANSISTOR, 4 A 45 V HFE:750, 3-PIN TO-225

DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor

This series of plastic medium-power silicon PNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications.

Darlington Transistor, Pnp, -45V, To-225; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:45V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:40W; Corriente De Colector Dc:4A; Núm. De Contactos:3 |Onsemi BD676G

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 4 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 750 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 40 / Package Type = TO-225 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bulk Box / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.5 / Reflow Temperature Max. °C = 260