供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiBC848BWT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
onsemiBC847CWT1G
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 15nA ICBO 150mW 100MHz
NXP SemiconductorsBC846AT,115
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 110 @ 2mA 5V 100mA 150mW 100MHz
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Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110
描述
由其分销商提供的 onsemi BC848CWT1G 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BC848 Series 30 V 100 mA SMT NPN General Purpose Transistor - SC-70-3
ON SEMI BC848CWT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SC-70
30V 150mW 100mA NPN SC-70-3 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT NPN 30V 0.1A Automotive 3-Pin SC-70 T/R
onsemi NPNTransistor, SOT-323 (SC-70)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage30 V
NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
TRANSISTOR, BIPOL, NPN, 30V, SOT-323-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height900 µm
Length2.2 mm
Width1.35 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明