供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
相关零件
onsemiBC81825MTF
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.MMBT4124-7-F
MMBT4124 Series 25 V 200 mA 300 mW NPN Small Signal Transistor - SOT-23-3
Diodes Inc.BC848B-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
描述
由其分销商提供的 onsemi BC81816MTF 的描述。
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 25V 0.8A 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)25 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min60
Max Breakdown Voltage25 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation310 mW
Schedule B8541290080
Transition Frequency100 MHz
Dimensions
Height930 µm
Length2.9 mm
Width1.3 mm