备用零件
Price @ 1000
$ 0.102
$ 0.175
$ 0.175
Stock
274,596
112,027
112,027
Authorized Distributors
6
2
2
Mount
Through Hole
-
-
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
1.2 A
1 A
1 A
Transition Frequency
-
200 MHz
200 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
30000
30000
30000
Power Dissipation
625 mW
1.5 W
1.5 W
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-01-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi BC517-D74Z 的描述。
ON Semiconductor BC517-D74Z Transistor BJT NPN TO 92 Tape Discrete Transistors
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC517 Series 30 V 1.2 A 625 mW NPN Darlington Transistor - TO-92-3
Trans Darlington NPN 30V 1.2A 625mW 3-Pin TO-92 Ammo
NPN Bipolar Darlington Transistor
DARLINGTON TRANSISTOR, 30V, 1.2A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:1.2A; RF Transistor Case:TO-92; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight286 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current1.2 A
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min30000
Max Breakdown Voltage30 V
Max Collector Current1.2 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Voltage Rating (DC)30 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm